还得看看AC的热仿真,这个事情不是拍脑袋这么简单
ref:Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs
- 用electro-thermal simulation 复现了output 和transfer characteristic
- 还搞了一个thermal resistance method 来仿真交流情况,待会仔细看看
ref:Lattice heat flow thermal modeling of recessed bridge-gate InAlGaN/GaN HEMT
用recess gate 构型
- silvaco TCAD
- model 包括 drift-diffusion ;hydrodynamic carrier transport ;SRH,auger; polarization;mobility model to capture high/low field;
- phonon scattering & surface scattering ; lattice heat flow
欸silvaco有phonon功能吗
这个模型是CVTmodel,里面含有phonon散射的项 - lattice heat flow using giga
热容*温变=产热+传热
考虑自热过后饱和电流下降了,怎会如此,我记得我看的结论是限制电流的是空间电荷区,而且2DEG不是有温度稳定性吗
截止频率定义为开路交流增益为1的频率,要求: - 小电容,高gm的确GaN是最好的